Programmable RF/IF bandpass filter utilizing MEM devices Download PDF
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- Publication number
- US6150901A US6150901AUS09/197,166US19716698AUS6150901AUS 6150901 AUS6150901 AUS 6150901AUS 19716698 AUS19716698 AUS 19716698AUS 6150901 AUS6150901 AUS 6150901A
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- Floyd Van Auken
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- Rockwell Collins Inc
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- ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).Assigned to ROCKWELL COLLINS, INC.reassignmentROCKWELL COLLINS, INC.Assignors: VAN AUKEN, FLOYD
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- Criticalpatent/US6150901A/en
- Critical
- Critical
- H--ELECTRICITY
- H03H--IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/01--Frequency selective two-port networks
- H01--BASIC ELECTRIC ELEMENTS
- H01G5/00--Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H03--BASIC ELECTRONIC CIRCUITRY
- H03H15/00--Transversal filters
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MEM switches in MEMS array 325 can be any miniature switch having contacts which are mechanically opened and closed. The contacts can be opened and closed based upon electromagnetic or electrostatic principles. For instance, the MEM switch can be a micromachine miniature switch disposed on a semiconductor substrate, such as, silicon, glass, or gallium arsenide. The switch can use a suspended silicon dioxide microbeam as a cantilever arm which connects platinum-to-gold electrocontacts in response to electrostatic actuation.
The switch can also be a micro-electro-mechanical switch device where a polysilicon panel overlays a trench. The polysilicon panel is electromagnetically actuated to deform and to connect to a contact provided on a glass cap wafer disposed over the trench. The switch can also be a microelectronic switch having a configuration similar to a field effect transistor (FET). The term micro-electro-mechanical switch or MEM switch refers to any small-scale switch which mechanically moves.
Referring now to FIG. 2, a conventional acoustic charged transport (ACT) device 2 is depicted. ACT device 2 is a high speed monolithic charged transport device that provides the fundamental function of RF/IF signal delay. A piezoelectric material 3 includes a series of taps, i.e., tap 1, tap 2, tap 3, etc., on a top surface. An RF signal line is coupled to input terminal 4. The RF signal is delayed in transmission through piezoelectric material 3 by means of an ultrasonic transducer induced surface acoustic wave (SAW) which propagates at the speed of sound across the crystal surface. The surface wave induces a sinusoidal variation 6 in the electric potential of an epitaxial layer 7 that interacts with the RF/IF signal so that a delayed RF/IF output signal is provided at output terminal 8 of ACT device 2. In one arrangement of ACT device 2 epitaxial layer 7 overlies a gallium arsenide (GaAs) substrate 9.
Referring now to FIG. 3, a block diagram of a programmable RF/IF bandpass filter 10 using ACT/MEMS technology is depicted. Filter 10 is a more detailed version of programmable bandpass filter 300 described with reference to FIG. 1. An RF/IF signal is communicated along an input line 15 to an ACT channel 20. ACT channel 20 is a filter element which uses surface acoustic wave (SAW) technology, including a SAW oscillator 25. In one embodiment of the present invention, SAW oscillator 25 is a one Gigahertz (GHz) oscillator. SAW oscillator 25 and RF/IF input 15 are coupled to ACT channel 20. Generally, ACT devices are fundamentally programmable analog signal processors capable of operating into the L-band frequency range. The applications for ACT technology range from matched filters, adaptive interference cancellers, programmable bandwidth filters, channel equalizers, auto correlators, pattern recognizers, signature identifiers, etc.
ACT device 20 produces finite impulse response filtering using the configuration depicted in FIG. 3. ACT channel 20 converts the input signal 15 into a series of electron packets that are transported in the traveling potential wells of the SAW produced by oscillator 25. As the charge packets propagate on the ACT channel 20, non-destructive sensing electrodes 30 are used to tap the signal at fixed intervals. Each of weighting circuits 40 weight the tap signals from all of the 128 taps, the weighted signals being summed to perform the finite impulse response filtering operation.
RF input 15 typically communicates a signal having a frequency in the range of about 30-500 Megahertz. ACT channel 20 has a multiplicity of nondestructive sensing (NDS) taps 30 that are physically separated from each other along ACT channel 20. Each of taps 30 are oriented across ACT channel 20 and are adapted to pick up the RF energy communicated along ACT channel 20. Each NDS tap 30 picks up RF energy and delays the signal by a fixed interval, each successive tap delaying the signal by an additional fixed interval. Thus, the filter is a delay line concept having fixed precise delays. In an alternative embodiment, these delays are not necessarily fixed but may be varied.
In one embodiment of the present invention, there will be 128 NDS taps 30 or in an alternative embodiment there will be 256 NDS taps 30. However, any number of NDS taps 30 may be used. Further, in one embodiment of the present invention each tap is representative of a six nanosecond delay. Therefore, as depicted in FIG. 3, ACT channel 20 has 128 NDS taps 30 producing a maximum delay of 768 nanoseconds.
Each NDS tap 30 has an output 32 coupled to a buffering amplifier 35. Each buffering amplifier 35 has an output 37 coupled to a weighting circuit 40. From a functional standpoint each weighting circuit 40 represents a programmable RF attenuator.
In one embodiment of the present invention, weighting circuits 40 are MEM switch and capacitor ladders. In general, MEMS use micro-scale mechanical devices to perform functions (such as sensing and actuation) conventionally achieved with solid-state or bulk mechanical approaches. MEMS technology is ideally applied in the area of electrical switching. MEM switches provide dramatic advantages when compared with solid-state switching approaches (such as FETs or PIN diodes). The desirability of MEM switches stems from their desirable characteristics including low insertion loss when closed (less than -0.1 dB), high isolation when open (greater than 70 dB), broad frequency response (DC to beyond 25 GHz), low power consumption to actuate, small physical size, and compatibility with integration with other electronic components. MEM switches are relatively fast operating switches when compared to conventional mechanical switches. MEM switches are capable of switching when a different bandwidth or different center frequency is selected, with a response time of under 10 microseconds. The benefits of MEMS technology is important in system architectures using large numbers of switching elements including the programmable filters disclosed herein.
Each weighting circuit 40 includes a parallel array of capacitor and switch combinations connected in parallel with each other. Each MEM switch 45 may be opened such that a particular leg of the ladder becomes an inactive branch of weighting circuit 40, or alternatively each MEM switch 45 may be switched to ground which activates a particular branch of the ladder from weighting circuit 40. For each weighting circuit, selection of the proper combination of switch configurations produces a different NDS tap 30 coefficient. Each MEM switch and capacitor ladder 40 includes a main MEM switch 50 which controls the output of the particular weighting circuit 40.
Each of the plurality of weighting circuits 40 has outputs 55 coupled to a summing amplifier 60, the output 65 of summing amplifier 60 being the filtered output of RF input signal 15.
Each of MEM switch and capacitor ladders 40 are coupled to a MEM switch control 70. Each of MEM switch control 70 are coupled to a digital interface 75 having a programmable look-up table, the look-up table having the tap coefficients and the respective MEM switch configurations for given filter response characteristics. The digital interface 75 is coupled to a power source 80, a clock 85, and a tap coefficient load input 90. Thus, digital interface 75 provides a control signal that manipulates switch 45 and switch 50 for the appropriate bandwidth response.
Referring now to FIG. 4, an alternative embodiment for a programmable RF/IF bandpass filter 100 using MEMS technology is shown. Programmable filter 100 is a more detailed version of programmable bandpass filter 300 described with reference to FIG. 1. Filter 100 generally includes an RF/IF input/output line 10, a plurality of multiple filter sections 120, and a digital programmable interface 130. Each of multiple filter sections 120 include a coupling capacitor array 122 coupled in series with the RF/IF input/output line 110. Each multiple filter section 120 also has a tuner 124 coupled with the output of coupling capacitor array 122, capable of tuning the filter section to a programmed frequency response to filter the signal communicated along line 110. Tuner 124 is coupled to digital interface 130 and receives digital signals communicated along a tune control line 125. Tuner 124 includes a digital to analog (D/A) converter 142 that converts the digital command signals from digital interface 130 to analog DC tune voltage signals, along line 143.
MEM switch array 144 is configured by MEM switch control outputs 150, from digital interface 130, to select a MEMS varactor in the MEMS varactor array 145. The analog tune voltage signal on line 143 tunes the selected MEMS varactor in MEMS varactor array 145 thus reacting with resonator 146 to filter the input signal.
Each multiple filter section further has a coupling capacitor array 122. Coupling capacitor array 122 includes a first MEM switch array 152 coupled to a MEMS capacitor array 154 and further coupled to a second MEM switch array 156. MEM switch arrays 152 and 156 are controlled by signals from MEM switch control 150 to provide the proper signal coupling, dependent upon the desired bandwidth, center frequency, and tuning, provided to digital interface 130 along control lines 160, 162, and 164 respectively. Further, digital interface 130 receives power through a power input 166 and a clock signal through a clock input 168. Filter 100 also includes a MEM switch array 170 coupled with a MEMS input capacitor array 172 coupled to line 10. As with all MEM switches in filter 100, MEM switch array 170 is controlled through a MEM switch control 150 to provide the programmed filter response characteristic. Similarly, a back end coupling capacitor array 174 and a MEM switch array 176 and MEMS output capacitor array 178 are included, also being controlled through a MEM switch control 150 to provide the appropriate frequency response and impedance matching of filter 100.
It is understood that while the detailed drawings and examples given describe preferred exemplary embodiments of the present invention, they are for the purposes of illustration only. The method and apparatus of the invention is not limited to the precise details and conditions disclosed. For example, the invention is not limited to the number of taps or filter sections disclosed. Alternatively, any number of taps and/or filter sections can be used, configured appropriately for the application. Further, the invention is not limited to communication devices or RF/IF communication signals, any of a number of electrical signals may be filtered using the disclosed device. Various changes may be made to the details disclosed without departing from the spirit of the invention, which is defined by the following claims.
Claims (7)
a micro-electro-mechanical system input capacitor array connected across the input to a ground to provide input matching for the input signal;
a plurality of filter sections connected to the input for filtering the input signal and providing a filtered output signal with the programmed frequency response each of said filter sections further comprising:a coupling capacitor array connected in series with the input; and
a tuner connected across the coupling capacitor array to the ground for filtering the input signal to provide the filtered output signal with the programmed frequency response;
a back end coupling capacitor array connected to a last filter section in the plurality of filter sections for coupling the filtered output signal to an output;
a micro-electro-mechanical system output capacitor array connected across the output to the ground to provide output matching for the output signal; and
a digital programmable interface for controlling the micro-electro-mechanical system input capacitor array, the coupling capacitor array, the tuner array, the back end coupling capacitor array, and the micro-electro-mechanical system output capacitor array to provide the output signal with the programmed frequency response.
2. The programmable high frequency bandpass filter of claim 1 wherein the micro-electro-mechanical system input capacitor array further comprises an array of micro-electro-mechanical system capacitors switched by an array of micro-electro-mechanical system switches.
3. The programmable high frequency bandpass filter of claim 1 wherein the coupling capacitor array further comprises a first micro-electro-mechanical system switch array coupled to a micro-electro-mechanical system capacitor array and further coupled to a second micro-electro-mechanical switch array.
4. The programmable high frequency bandpass filter of claim 1 wherein the tuner further comprises:a resonator with a first end connected to the coupling capacitor array;
a micro-electro-mechanical system switch array connected to a second end of the resonator;
a micro-electro-mechanical system varactor array connected to the microelectro-mechanical system switch array said micro-electro-mechanical system switch array operably connected to select an individual micro-electro-mechanical system varactor; and
a digital-to-analog converter for converting tune control digital signals from the digital programmable interface to a tune voltage signal to tune the individual micro-electro-mechanical system varactor to provide the programmed frequency response in cooperation with the resonator.
5. The programmable high frequency bandpass filter of claim 1 wherein the a back end coupling capacitor array further comprises a first micro-electro-mechanical system switch array coupled to a micro-electro-mechanical system capacitor array and further coupled to a second micro-electro-mechanical system switch array.
6. The programmable high frequency bandpass filter of claim 1 wherein the output capacitor array further comprises an array of micro-electro-mechanical system capacitors switched by an array of micro-electro-mechanical system switches.
7. The programmable high frequency bandpass filter of claim 1 wherein the digital programmable interface converts selected bandwidth, selected center frequency, and tune data into tune control signals and micro-electro-mechanical system switch control digital signals.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/197,166US6150901A (en) | 1998-11-20 | 1998-11-20 | Programmable RF/IF bandpass filter utilizing MEM devices |
Publications (1)
Publication Number | Publication Date | ||
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US09/197,166Expired - LifetimeUS6150901A (en) | 1998-11-20 | 1998-11-20 | Programmable RF/IF bandpass filter utilizing MEM devices |
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